unisonic technologies co., ltd 13N50K preliminary power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2014 unisonic technologies co., ltd qw-r502-a85.a 13 a , 500v n-channel power mosfet ? description the utc 13N50K is an n-channel enhancement mode power mosfet. the device adopts planar stripe and uses dmos technology to minimize and provide lower on-state resistance and faster switching speed. it can also withstand high energy pulse under the avalanche and commutation mode conditions. the utc 13N50K is ideally suitable for high efficiency switch mode power supply, power factor co rrection, electronic lamp ballast based on half bridge topology. ? features * r ds(on) <0.48 ? @v gs = 10v * ultra low gate charge (typical 39nc ) * low reverse transfer capacitance ( c rss = typical 20pf ) * fast switching capability * avalanche energy tested * improved dv/dt capability, high ruggedness ? symbol to-220f2 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13N50Kl-tf2-t 13N50Kg-tf2-t to-220f2 g d s tube
13N50K preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-a85.a ? marking information package marking to-220f2
13N50K preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-a85.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v continuous drain current i d 13 a pulsed drain current (note 2) i dm 52 a avalanche current (note 2) i ar 13 a single pulsed avalanche energy (note 3) e as 700 mj repetitive avalanche energy (note 2) e ar 17 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation (t c =25c) p d 48 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l = 8mh, i as = 13a, v dd = 50v, r g = 25 ? ,starting t j = 25c 4. i sd 13.a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 2.58 c/w
13N50K preliminary power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-a85.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 500 v drain-source leakage current i dss v ds = 500v, v gs = 0v 10 a gate-source leakage current i gss v gs = 30v, v ds = 0v 100 na v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250ma,referenced to 25c 0.5 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 6.5a 0.42 0.48 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 1800 2300 pf output capacitance c oss 245 320 pf reverse transfer capacitance c rss 25 35 pf switching characteristics turn-on delay time t d ( on ) v dd =250v, i d =13a, r g =25 ? (note 1,2) 40 90 ns turn-on rise time t r 140 290 ns turn-off delay time t d ( off ) 100 210 ns turn-off fall time t f 85 180 ns total gate charge q g v ds =400v, i d =13a, v gs =10 v (note 1,2) 39 60 nc gate-source charge q gs 12 nc gate-drain charge q gd 11 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0v, i s = 13 a 1.4 v maximum continuous drain-source diode forward current i s 13 a maximum pulsed drain-source diode forward current i sm 52 a reverse recovery time t r r v gs = 0v, i s = 13a, di f / dt =100a/ s (note 1) 290 ns reverse recovery charge q rr 2.6 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating ambient temperature
13N50K preliminary power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-a85.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
13N50K preliminary power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-a85.a ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circui t gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
13N50K preliminary power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-a85.a utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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